Author/Authors :
Maٌez، نويسنده , , N. X. Sun، نويسنده , , G.C. and Ben Chouikha، نويسنده , , M. and Algani، نويسنده , , C. and Alquié، نويسنده , , G. and Verdeil، نويسنده , , C. and Talbi، نويسنده , , N. and Khirouni، نويسنده , , K. and Bourgoin، نويسنده , , J.C.، نويسنده ,
Abstract :
X-ray detectors are fabricated with non-intentionally doped thick epitaxial GaAs layers grown by a chemical technique. They are p+/i/n+ structures in which the highly doped p- and n-type layers are made by ion implantation on both faces of the i epilayers. In order to understand the behaviour of charge collection, we modelize the capacitance–voltage characteristics of such structures, which are then compared with experimental data.
Keywords :
Space charge region , epitaxy , X-ray detectors , GaAS
