Author/Authors :
Vigil-Galلn، نويسنده , , O. and Sastré-Hernلndez، نويسنده , , J. and Cruz-Gandarilla، نويسنده , , F. and Aguilar-Hernلndez، نويسنده , , J. and Marيn، نويسنده , , E. and Contreras-Puente، نويسنده , , G. and Saucedo، نويسنده , , E. and Ruiz، نويسنده , , C.M. and Bermْdez، نويسنده , , V. and Tufiٌo-Velلzquez، نويسنده , , M.، نويسنده ,
Abstract :
A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×1017–8×1018 cm−3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×105 Ω-cm for Bi concentrations of 8×1018 cm−3. These are meaningful results for CdTe-based solar cells.
Keywords :
CdTe , Thin films , Bi doping , CSVT method , Physical Properties
