Low cost surface passivation for p-type mc-Si based on pseudobinary alloys (Al2O3)x(TiO2)1−x

The conventional process for back side passivation with full face Al screen printing layer is not suitable for very thin multicrystalline (mc-Si) solar cells and approaches to new technological processes are searched for. More investigations have been concentrated on local aluminum contacts and passivation coatings with different layers on mc-Si wafers. The aim of this work is to prove that (Al2O3)x(TiO2)1−x is one promising candidate to be applied as passivation layer on multicrystalline Si. Investigations were performed on dielectric films of pseudobinary alloy (PBA) (Al2O3)x(TiO2)1−x, prepared by chemical solution deposition known initially as sol–gel method. It was determined that their optical, dielectric and electrophysical properties are suitable for applications of these layers as back side surface passivation for thin multicrystalline silicon cells.