Different phases of indium selenide prepared by annealing In/Se bilayer at various temperatures: Characterization studies

Thin films of indium selenide were prepared by annealing Indium/Selenium stack layers at different temperatures ranging from 100 to 400 °C. Structural and optical characterizations were done using X-ray diffraction and optical absorption studies, respectively. Compositional analysis was done by employing Rutherford backscattering spectroscopy and X-ray photoelectron spectroscopy confirmed the compound formation. Photosensitivity and sheet resistance of these samples were also determined at room temperature. It was found that multi-phased films were formed at lower annealing temperatures and single phase films at higher annealing temperatures. A structural re-orientation as well as a phase transformation from β-In2Se3 to γ-In2Se3 was observed on annealing at 400 °C.