Title of article :
Solving partial differential equations on irregular domains with moving interfaces, with applications to superconformal electrodeposition in semiconductor manufacturing
Author/Authors :
Sethian، نويسنده , , J.A. and Shan، نويسنده , , Ying، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
37
From page :
6411
To page :
6447
Abstract :
We present a numerical algorithm for solving partial differential equations on irregular domains with moving interfaces. Instead of the typical approach of solving in a larger rectangular domain, our approach performs most calculations only in the desired domain. To do so efficiently, we have developed a one-sided multigrid method to solve the corresponding large sparse linear systems. cus is on the simulation of the electrodeposition process in semiconductor manufacturing in both two and three dimensions. Our goal is to track the position of the interface between the metal and the electrolyte as the features are filled and to determine which initial configurations and physical parameters lead to superfilling. in by motivating the set of equations which model the electrodeposition process. Building on existing models for superconformal electrodeposition, we develop a model which naturally arises from a conservation law form of surface additive evolution. We then introduce several numerical algorithms, including a conservative material transport level set method and our multigrid method for one-sided diffusion equations. We then analyze the accuracy of our numerical methods. Finally, we compare our result with experiment over a wide range of physical parameters.
Keywords :
multigrid methods , Semiconductor process , Level set methods , Superconformal electrodeposition , Conservative material level set methods , Immersed interface methods
Journal title :
Journal of Computational Physics
Serial Year :
2008
Journal title :
Journal of Computational Physics
Record number :
1480788
Link To Document :
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