Title of article :
Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure
Author/Authors :
Sakurai، نويسنده , , K. and Scheer، نويسنده , , R. and Nakamura، نويسنده , , S. and Kimura، نويسنده , , Y. and Baba، نويسنده , , T. and Kaufmann، نويسنده , , C.A. and Neisser، نويسنده , , A. and Ishizuka، نويسنده , , S. Narita-Yamada، نويسنده , , A. and Matsubara، نويسنده , , K. and Iwata، نويسنده , , K. and Fons، نويسنده , , P. and Nakanishi، نويسنده , , H. and Niki، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
8
From page :
3377
To page :
3384
Abstract :
We have studied the three-stage deposition process of CuIn1−xGaxSe2 (CIGS) thin films using spectroscopic light scattering (SLS), under varied deposition conditions. The structural changes of CIGS films by (1) Ga composition, (2) Se supply and (3) low deposition temperature, were observed in situ by SLS. The largest changes in SLS profiles by the Ga composition was observed between x = 0.3 and 0.5. The SLS profiles changed significantly during stage 1 by varying the Se pressure, while the temperature profiles did not.
Keywords :
solar cell , Light Scattering , SLS , CIGS , Three stage
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2006
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1480879
Link To Document :
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