The structural and electrical properties of Ga-doped ZnO and Ga, B-codoped ZnO thin films: The effects of additional boron impurity

Transparent conducting films of Ga-doped ZnO (GZO) and Ga-, B-codoped ZnO (GZOB) were deposited by dc magnetron sputtering. The dependence of the electrical and structural properties on the type of doping (Ga-doping or Ga-, B-codoping) and substrate temperature were investigated. Microstructural analysis suggests that the substrate temperature and the type of doping modify the microstructure and surface morphology of thin films. GZOB films grown at 200 °C showed a dense structure without columns, a low-resistivity value of 4.2×10−4 Ω cm, and a visible transmission of 90% with a thickness of 200 nm. In addition, the thermal stability of resistivity of GZOB films was greater than one of GZO films.