Title of article
S and Te inter-diffusion in CdTe/CdS hetero junction
Author/Authors
R. and Pantoja-Enrيquez، نويسنده , , J. Pantoja and Gَmez Barojas، نويسنده , , E. and Silva-Gonzلlez، نويسنده , , R. C. Pal، نويسنده , , U.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
1392
To page
1397
Abstract
Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe 1 - x S x ternary compound at the CdTe–CdS interface.
Keywords
CdTe , AES , CdTe/CdS , Inter-diffusion , CDS
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2007
Journal title
Solar Energy Materials and Solar Cells
Record number
1481442
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