Title of article :
Purification of MG silicon by thermal plasma process coupled to DC bias of the liquid bath
Author/Authors :
Rousseau، نويسنده , , S. and Benmansour، نويسنده , , M. and Morvan، نويسنده , , D. and Amouroux، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
10
From page :
1906
To page :
1915
Abstract :
The aim of this work is the purification of metallurgical grade silicon for photovoltaic applications using a thermal plasma process. In this study, the plasma treatment was combined with a DC bias of the liquid silicon to increase the kinetics of the impurities extraction. On-line measurement by optical emission spectroscopy (OES), ex-situ analysis by laser induced breakdown spectroscopy (LIBS) and ICP techniques allowed to demonstrate that elimination of cationic impurities (Fe, Al, Ca, etc.) increased when the positive bias increased. The ICP results show that a high positive bias leads to a purification factor of about 10 for most of the impurities.
Keywords :
bias , MG silicon , Thermal plasma
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2007
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1481622
Link To Document :
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