Simple analytical solution and efficiency improvement of polysilicon emitter solar cells

A simple analytical model has been developed to simulate the performance of solar cells with polysilicon contact on the front surface. The polysilicon layer with a columnar grain structure is modeled by an effective recombination velocity using a two-dimensional transport equation. A one-dimensional transport equation in the single-crystal emitter is solved, taking into account bulk recombination and non-uniformly doped emitter. Then, simple analytical expressions for the emitter reverse saturation current and light-generated current densities are obtained. The collection of the light-generated carriers in polysilicon layer has been discussed and an analytical solution of the light-generated current is derived. The results show that the polysilicon layer can result in a decrease in emitter reverse saturation current density and an increase in solar cell photovoltaic parameters. In fact, the emitter region should not be treated as a ‘dead layer’ because thin polysilicon layer front surface contact gives an improvement of about 60 mV for the open-circuit voltage, 3.6 mA/cm2 for the photocurrent, and 3.9% for the cell efficiency.