Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system

The intermediate solid solution, γ-phase, exists in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the ‘Cu3Cd2In3S8’–‘CuCd2InSe4’ compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 1015–1016 cm−3 range and mobilities up to 18 cm2/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells.