Temperature dependence of I–V characteristics and performance parameters of silicon solar cell

The temperature dependence of open-circuit voltage (Voc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295–320 K. The rate of decrease of Voc with temperature (T) is controlled by the values of the band gap energy (Eg), shunt resistance (Rsh) and their rates of change with T. We have found that Rsh decreases nearly linearly with T and its affect on dVoc/dT is significant for cells having smaller Rsh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of Rs and other parameters but also on the rate of change of Rs with voltage. The rate of decrease of Rs with voltage and T are important to estimate the value of CF and its decrease with temperature accurately.