Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser deposition

The paper deals with the optoelectronic properties of the technologically appealing ZnTe/GaAs hetero-pairing formed with nanosecond infrared pulsed-laser deposition. Depending on the applied bias polarity of only 0.5 V, the spectral shape of the direct current responsivity is either a narrow (0.29 meV) peak at 1.378 eV or a broad response starting at the GaAs bandgap. The spectra of the alternating responsivity did not show such a drastic bias dependence. The results are interpreted by the peculiar absorption properties at the ZnTe/GaAs interface.