Title of article
Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser deposition
Author/Authors
Acharya، نويسنده , , K.P. and Erlacher، نويسنده , , A. and Ullrich، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
25
To page
27
Abstract
The paper deals with the optoelectronic properties of the technologically appealing ZnTe/GaAs hetero-pairing formed with nanosecond infrared pulsed-laser deposition. Depending on the applied bias polarity of only 0.5 V, the spectral shape of the direct current responsivity is either a narrow (0.29 meV) peak at 1.378 eV or a broad response starting at the GaAs bandgap. The spectra of the alternating responsivity did not show such a drastic bias dependence. The results are interpreted by the peculiar absorption properties at the ZnTe/GaAs interface.
Keywords
Zinc telluride , Gallium arsenide , Responsivity , Pulsed-Laser Deposition
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2009
Journal title
Solar Energy Materials and Solar Cells
Record number
1482275
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