Title of article :
Twenty-two percent efficiency HIT solar cell
Author/Authors :
Tsunomura، نويسنده , , Yasufumi and Yoshimine، نويسنده , , Yukihiro and Taguchi، نويسنده , , Mikio and Baba، نويسنده , , Toshiaki and Kinoshita، نويسنده , , Toshihiro and Kanno، نويسنده , , Hiroshi and Sakata، نويسنده , , Hitoshi and Maruyama، نويسنده , , Eiji and Tanaka، نويسنده , , Makoto، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
670
To page :
673
Abstract :
We have achieved the worldʹs highest solar cell conversion efficiency of 22.3% (Voc: 0.725 V, Isc: 3.909 A, FF: 0.791, total area: 100.5 cm2, confirmed by AIST) by using a heterojunction with intrinsic thin layer (HIT) structure. This is the worldʹs first practical-size (>100 cm2) silicon solar cell that exceeds a conversion efficiency of 22% as a confirmed value. This high efficiency has been achieved mainly due to improvements in a-Si:H/c-Si hetero-interface properties and optical confinement. cellent a-Si:H/c-Si hetero-interface of the HIT structure enables a high Voc of over 0.720 V and results in better temperature properties. In order to reduce the power-generating cost, we are now investigating numerous technologies to further improve the conversion efficiency, especially the Voc, of HIT solar cells, with the aim of achieving 23% efficiency in the laboratory by 2010.
Keywords :
High-efficiency solar cells , Heterojunction , Crystalline silicon
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2009
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1482542
Link To Document :
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