Title of article
Novel separation process for free-standing silicon thin-films
Author/Authors
Willi and Tobail، نويسنده , , O. and Reuter، نويسنده , , M. and Eisele، نويسنده , , S. and Werner، نويسنده , , J.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
710
To page
712
Abstract
Reduction of the solar cell thickness decreases the material use and offers a mechanically flexible cell. The present contribution introduces a novel method to produce free-standing thin monocrystalline Si layers and solar cells. The method has three advantages over other methods: (i) The device layer is mechanically stable on the host wafer during device fabrication. (ii) Nevertheless, the separation of the layer is guaranteed after the device fabrication. (iii) No foreign substrate is necessary for the layer separation. The method is based on the locally defined formation of buried cavities only beneath the regions to be separated from the host wafer.
Keywords
Layer transfer , Selective etching , Porous Si
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2009
Journal title
Solar Energy Materials and Solar Cells
Record number
1482576
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