Author/Authors :
Becker، نويسنده , , C. and Conrad، نويسنده , , E. and Dogan، نويسنده , , P. and Fenske، نويسنده , , F. and Gorka، نويسنده , , B. and Hنnel، نويسنده , , T. and Lee، نويسنده , , K.Y. and Rau، نويسنده , , B. and Ruske، نويسنده , , Ian F. and Weber، نويسنده , , T. and Berginski، نويسنده , , M. and Hüpkes، نويسنده , , J. and Gall، نويسنده , , S. and Rech، نويسنده , , B.، نويسنده ,
Abstract :
The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 Ω after 22 h annealing at 600 °C and only slightly increases for a 200 s heat treatment at 900 °C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 °C.
Keywords :
Solid-phase crystallization , Transparent conductive oxide , Thin-film solar cell , Polycrystalline silicon
