Title of article :
Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization
Author/Authors :
Korte، نويسنده , , Gabriel L. and Conrad، نويسنده , , E. and Angermann، نويسنده , , H. and Stangl، نويسنده , , R. and Schmidt، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
Our progress in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cell technology and current understanding of fundamental device physics are presented. In a-Si:H/c-Si cells, device performance is strongly dependent on the quality of the a-Si:H/c-Si heterojunction. Four topics are crucial to minimize recombination at the junction and thereby maximize cell efficiency: wet-chemical pre-treatment of the c-Si surface prior to a-Si:H deposition; optimum a-Si:H doping; thermal and plasma post-treatments of the a-Si:H/c-Si structure. By optimizing these aspects using specifically developed characterization methods, we were able to realize (n)a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si cells with up to 18.5% and 19.8% efficiency, respectively.
Keywords :
Silicon , high efficiency , amorphous silicon , Heterojunction
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells