• Title of article

    Rapid formation of transparent CuAlO2 thin film by thermal annealing of Cu on Al2O3

  • Author/Authors

    Lockman، نويسنده , , Zainovia and Lin، نويسنده , , Loh Poh and Yew، نويسنده , , Cheong Kuan and Hutagalung، نويسنده , , Sabar Derita and Ahmad، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    5
  • From page
    1383
  • To page
    1387
  • Abstract
    An 850-nm-thick CuAlO2 film was formed by solid state reaction of evaporated thin film Cu on c-cut Al2O3 (sapphire) at 1200 °C for reaction times as short as 10 min. X-ray diffractogram confirms the formation of (0 0 l) CuAlO2, indicating oriented growth of CuAlO2 on c-cut Al2O3. Fourier transformation infra-red (FTIR) spectra showed peaks corresponding to Cu–O, Al–O and O–Cu–O bonds, confirming further the CuAlO2 phase formation. UV–visible spectrum measurement showed high transparency of the film in the visible region with a direct band gap of 3.25 eV. The mechanism of the formation of the film is discussed.
  • Keywords
    CuAlO2 , p-Type , transparent conducting oxides , solid-state reaction
  • Journal title
    Solar Energy Materials and Solar Cells
  • Serial Year
    2009
  • Journal title
    Solar Energy Materials and Solar Cells
  • Record number

    1483096