Proposal for a high voltage AlGaAs/AlGaAs/GaAs triple junction photovoltaic cell

A monolithic high voltage 1.87 eV AlGaAs/1.65 eV AlGaAs/1.42 eV GaAs triple junction (3J) photovoltaic (PV) cell design is presented. The motivation for this particular design is to reduce resistive I2R power loss that degrades PV module efficiency, to bypass the use of limited resources such as indium and germanium, and to simplify epitaxial growth with the lattice matched AlxGa1−xAs semiconductor family.