• Title of article

    Development status of high-efficiency HIT solar cells

  • Author/Authors

    Mishima، نويسنده , , Takahiro and Taguchi، نويسنده , , Mikio and Sakata، نويسنده , , Hitoshi and Maruyama، نويسنده , , Eiji، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    18
  • To page
    21
  • Abstract
    This paper describes the development status of high-efficiency heterojunction with intrinsic thin-layer (HIT) solar cells at SANYO Electric. Presently, the conversion efficiency of our standard HIT solar cell has reached a level of 23.0% for a practical size of (100.4 cm2) substrate. On the other hand, we have developed special technologies for effectively using thinner substrates for HIT solar cells. Surprisingly, we have achieved a quite high open circuit voltage (Voc) of 743 mV, and a high conversion efficiency of 22.8% using only a 98-μm-thick substrate. A 98-μm-thick cell also exhibits a good temperature coefficient, and allows the thickness of the substrate to be reduced by more than 50% while maintaining its efficiency. These results suggest that the HIT solar cell has the potential to further improve cost-performance.
  • Keywords
    Crystalline silicon , High-efficiency solar cell , Heterojunction
  • Journal title
    Solar Energy Materials and Solar Cells
  • Serial Year
    2011
  • Journal title
    Solar Energy Materials and Solar Cells
  • Record number

    1484661