Title of article :
Development status of high-efficiency HIT solar cells
Author/Authors :
Mishima، نويسنده , , Takahiro and Taguchi، نويسنده , , Mikio and Sakata، نويسنده , , Hitoshi and Maruyama، نويسنده , , Eiji، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
18
To page :
21
Abstract :
This paper describes the development status of high-efficiency heterojunction with intrinsic thin-layer (HIT) solar cells at SANYO Electric. Presently, the conversion efficiency of our standard HIT solar cell has reached a level of 23.0% for a practical size of (100.4 cm2) substrate. On the other hand, we have developed special technologies for effectively using thinner substrates for HIT solar cells. Surprisingly, we have achieved a quite high open circuit voltage (Voc) of 743 mV, and a high conversion efficiency of 22.8% using only a 98-μm-thick substrate. A 98-μm-thick cell also exhibits a good temperature coefficient, and allows the thickness of the substrate to be reduced by more than 50% while maintaining its efficiency. These results suggest that the HIT solar cell has the potential to further improve cost-performance.
Keywords :
Crystalline silicon , High-efficiency solar cell , Heterojunction
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2011
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1484661
Link To Document :
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