Title of article :
Effect of retrograde solubility on the purification of MG Si during fractional melting
Author/Authors :
Chung، نويسنده , , Juho and Kim، نويسنده , , Joonsoo and Jang، نويسنده , , Boyun and Ahn، نويسنده , , Youngsoo and Lee، نويسنده , , Heon and Yoon، نويسنده , , Wooyoung، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
45
To page :
48
Abstract :
MG Si can be effectively refined using a fractional melting process. The efficiency of fractional melting depends on two parameters, the heating rate and the wetness. Generally, the heating rate should be slow to ensure impurity diffusion and, in order to perfectly separate the liquid from the solid/liquid mixture, there should not be higher wetness. Many MG Si metal impurities exhibit retrograde solubility. The metal impurity behaviors with retrograde solubility were studied during the FM process. The change of the microstructure during the process was also studied with a SEM and an EPMA. Due to the retrograde behavior, slow heating below the maximum solubility temperature was not necessary to refine MG Si. For the FM process, the operating temperature range to refine MG Si should be carefully selected considering the behavior of major metal impurities in the mushy zone.
Keywords :
Fractional melting , Retrograde , Purification of silicon
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2011
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1484694
Link To Document :
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