Title of article :
Effect of hydrogen plasma passivation on performance of HIT solar cells
Author/Authors :
Jik Lee، نويسنده , , Seung and Hwan Kim، نويسنده , , Se and Won Kim، نويسنده , , Dae and Hyung Kim، نويسنده , , Ki and Kyu Kim، نويسنده , , Beom and Jang، نويسنده , , Jin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
We studied the performance improvement of HIT solar cells by optimizing H2 plasma exposure and deposition of thin a-S:H layer on c-Si. With increasing H2 treatment time, the VOC increases until 80 s and then decreases, indicating the optimum time is 80 s. It is found that the cell performance is almost the same with and without a thin a-Si:H layer when 80 s plasma is treated on the c-Si before i-layer deposition. The conversion efficiency of 14.04% was achieved at the substrate temperature of 160 °C.
Keywords :
Surface passivation , Silicon heterojunction (SHJ) , Hydrogen pretreatment
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells