Title of article
Determination of Cu(In1−xGax)3Se5 defect phase in MBE grown Cu(In1−xGax)Se2 thin film by Rietveld analysis
Author/Authors
Islam، نويسنده , , M.M. and Sakurai، نويسنده , , T. and Yamada، نويسنده , , A. and Otagiri، نويسنده , , S. and Ishizuka، نويسنده , , S. and Matsubara، نويسنده , , K. and Niki، نويسنده , , S. and Akimoto، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
231
To page
234
Abstract
Quantitative phase analysis of Cu(In1−xGax)Se2 (CIGS) thin film grown over Mo coated soda lime glass substrates was studied by Rietveld refinement process using room temperature X-ray data at θ–2θ mode. Films were found to contain both stoichiometric Cu(In1−xGax)Se2 and defect related Cu(In1−xGax)3Se5 phases. Best fitting was obtained using crystal structure with space group I-42d for Cu(In1−xGax)Se2 and I-42m for Cu(In1−xGax)3Se5 phase. The effects of Ga/III (=Ga/In+Ga=x) ratio and Se flux during growth over the formation of Cu(In1−xGax)3Se5 defect phase in CIGS was studied and the correlation between quantity of Cu(In1−xGax)3Se5 phase and solar cell performance is discussed.
Keywords
Rietveld method , quantitative phase analysis , Cu(In1?xGax)3Se5
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2011
Journal title
Solar Energy Materials and Solar Cells
Record number
1484953
Link To Document