Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

Cu(In,Ga)(S,Se)2 thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe2, CuInSe2, In2Se3 and Ga2Se3 compounds and then annealing in H2S gas atmosphere. The annealing temperature was varied from 400 to 500 °C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)2 thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400 °C demonstrated Voc=535 mV, Isc=13.3 mA/cm2, FF=0.61 and efficiency=4.34% without AR-coating.