Author/Authors :
Yuan، نويسنده , , Zhizhong and Pucker، نويسنده , , Georg and Marconi، نويسنده , , Alessandro and Sgrignuoli، نويسنده , , Fabrizio and Anopchenko، نويسنده , , Aleksei and Jestin، نويسنده , , Yoann and Ferrario، نويسنده , , Lorenza and Bellutti، نويسنده , , Pierluigi and Pavesi، نويسنده , , Lorenzo، نويسنده ,
Abstract :
The effects of a Si-rich silicon oxide (SRO) layer containing silicon nanocrystals as photoluminescence down-shifter layer on a conventional Si solar cell were investigated. Two SRO layers with different thicknesses but same composition were deposited on top of Si solar cells by plasma-enhanced chemical vapor deposition and followed by high temperature annealing to precipitate silicon nanocrystals. The SRO layers absorb efficiently high energy photons (especially higher than twice Si bandgap) and emit photons at longer wavelength, which are in turn absorbed by Si. A relative increase of about 14% to the internal quantum efficiency has been observed.
Keywords :
Photoluminescence , Silicon nanocrystal , plasma-enhanced chemical vapor deposition , Photoluminescence down shifter , solar cell