Author/Authors :
Zhang، نويسنده , , Yong and Wu، نويسنده , , Zhiming and Zheng، نويسنده , , Jinjian and Lin، نويسنده , , Xiangan and Zhan، نويسنده , , Huahan and Li، نويسنده , , Shuping and Kang، نويسنده , , Junyong and Bleuse، نويسنده , , Joel and Mariette، نويسنده , , Henri، نويسنده ,
Abstract :
We report the realization of a prototype solar cell based on a ZnO/ZnSe core/shell nanowire array. The ZnO/ZnSe core/shell nanowire forms a type II heterojunction that can have an effective bandgap much below that of either component. The nanowire array architecture offers strong enhancement in light absorption through increasing the junction area and light trapping. The device shows a photo-response threshold of ∼1.6 eV and a large open circuit voltage of 0.7 V. Type II optical transition at the ZnO/ZnSe interface is further confirmed by transmission, photoluminescence and time-resolved photoluminescence. This result opens up new options in selecting the absorber material for a solar cell.
Keywords :
Time resolved PL , Type II heterostructure , High bandgap semiconductors , Low effective bandgap , Sensitized solar cell , ZnO/ZnSe nanowire array