Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (Voc) of 1.52 V and a short-circuit current density (Jsc) of 8.68 mA/cm2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between Voc and In content in the InxGa1−xN alloys for this type of solar cell was also derived.