Enhancing functionality of ZnO hole blocking layer in organic photovoltaics

We present a simple post-processing treatment, which dramatically improves the electrical properties of inverted geometry bulk-heterojunction organic solar cells, by enhancing functionality of the zinc-oxide hole blocking layer. The results show that inherent problems associated with the ZnO layer (e.g. shunting and J–V inflection points) are of the same origin and can be efficiently treated and removed.