Title of article :
An approach to downconversion solar cells
Author/Authors :
Spitzer، نويسنده , , Mark B. and Jenssen، نويسنده , , Hans P. and Cassanho، نويسنده , , Arlete، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
5
From page :
241
To page :
245
Abstract :
We describe an approach to solar downconversion in which a semiconductor is used for absorption, and substitutional rare earth ions are used for emission. The semiconductor would provide broad-band absorption, and the rare earth ions would provide emission of multiple photons by a cross relaxation process in a narrow wavelength band. The emitted photons are then absorbed by a solar cell formed from a low band gap semiconductor such as silicon. Er and Yb are suggested owing to strong emission at 980 nm which are useful when the down-converter is paired with silicon solar cells. The use of InGaN is proposed for the absorbing host semiconductor.
Keywords :
downconversion , solar cell , cross relaxation , Quantum cutting , BaY2F8 , Ky3F10
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2013
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1487674
Link To Document :
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