Temperature of InxGa1−xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates

The characterization of InxGa1−xN/GaN-based solar cells with a InxGa1−xN multiple-quantum-well (MQW) structure on SiCN/Si(111) substrates at various operation temperatures is reported. Solar cell operation with a low dark-current density (Jd), a high open-circuit voltage (Voc), and a high short-circuit current density (Jsc) is demonstrated. An increase in the operation temperature results in increases in Jd and Jsc, but decreases in Voc, the fill factor (FF), and the photovoltaic efficiency (η). Device configurations with various levels of indium content are investigated under an air mass 1.5 global solar spectrum. The proposed structure can be used for fabricating solar cells with a low Jd of 2.01–4.27 μA/cm2, a high Voc of 2.34–2.94 V, a high Jsc of 2.71–2.82 mA/cm2, a high FF of 64.40–75.01%, and a high η of 4.25–5.99%.