Author/Authors :
Liu، نويسنده , , C.Y. and Lai، نويسنده , , C.C. and Liao، نويسنده , , J.H. and Cheng، نويسنده , , L.C. and Liu، نويسنده , , H.H. and Chang، نويسنده , , C.C. and Lee، نويسنده , , G.Y. and Chyi، نويسنده , , J.-I. and Yeh، نويسنده , , L.K. and He، نويسنده , , J.H. and Chung، نويسنده , , T.Y. and Huang، نويسنده , , L.C. and Lai، نويسنده , , K.Y.، نويسنده ,
Abstract :
InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.
Keywords :
Si substrates , concentrator , InGaN , GaN
