Author/Authors :
Bhandari، نويسنده , , Khagendra P. and Roland، نويسنده , , Paul J. and Mahabaduge، نويسنده , , Hasitha and Haugen، نويسنده , , Neale O. and Grice، نويسنده , , Corey R. and Jeong، نويسنده , , Sohee and Dykstra، نويسنده , , Tieneke and Gao، نويسنده , , Jianbo and Ellingson، نويسنده , , Randy J.، نويسنده ,
Abstract :
Here we report on heterojunction PbS quantum dot (QD) solar cells using RF magnetron sputtered CdS as the n-type window layer. These solar cells generate large open circuit voltage compared to previously reported PbS-QD solar cells. Our investigations of this device design show an optimized CdS film thickness of 70 nm and an optimized PbS QD diameter of ∼2.7 nm, corresponding to a bandgap energy of ∼1.57 eV. Under simulated AM1.5 G illumination, we attain short circuit current as high as 12 mA-cm−2, an open circuit voltage of 0.65 V and efficiency as high as 3.3%.
Keywords :
solar cell , Thin film , Quantum dot , PBS , CDS