Title of article
The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance
Author/Authors
Tong، نويسنده , , Jun and Luo، نويسنده , , Hai-Lin and Xu، نويسنده , , Zhu-An and Zeng، نويسنده , , Hao-Jie Xiao، نويسنده , , Xu-Dong and Yang، نويسنده , , Chun-Lei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
190
To page
195
Abstract
The influence of annealing treatment of molybdenum (Mo) film on the growth of CuInSe2 (CIS) thin film has been studied. We show that Mo film is with much better electrical conductivity and adhesion after being annealed in vacuum. It is found that annealing of Mo film not only modifies the orientation of In2Se3 (IS) precursor, but also the texture of CIS crystal. Thermally treated Mo film favors the growth of (220/204) oriented CIS film. CIS solar cell grown on annealed Mo film is found to be with higher device efficiency, which is attributed to the increased fill factor (FF).
Keywords
Molybdenum annealing treatment , CuInSe2 solar cell , Texture
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2013
Journal title
Solar Energy Materials and Solar Cells
Record number
1488917
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