New representatives with BaAl4, La3Al11 and BaHg11 structure types from the R–Zn–Ga systems (R = Y, Lu, Gd–Tm)

Fifteen new ternary RZn2−xGa2+x, R3Zn11−xGax and RZn11−xGax (R = Y, Lu, Gd–Tm) compounds have been synthesized by reacting the elements at 960 °C, followed by annealing at 400 °C. The crystal structure of all the compounds was solved from powder X-ray counter data and their compositions were confirmed by EDS analysis. Additionally, single crystal X-ray diffraction studies were also performed for the DyZn8.6Ga2.4 phase. It was found that the new compounds crystallize with BaAl4, La3Al11 and BaHg11 structure types, respectively.