Author/Authors :
Bachmann، نويسنده , , K.J. and Banks، نويسنده , , H.T. and Hِpfner، نويسنده , , C. and kepler، نويسنده , , G.M. and LeSure، نويسنده , , S. and McCall، نويسنده , , S.D. and Scroggs، نويسنده , , J.S.، نويسنده ,
Abstract :
A team composed of material scientists, physicists, and applied mathematicians have used computer simulations as a fundamental design tool in developing a new prototype High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) reactor for use in thin film crystal growth. Early design of the HPOMCVD reactor dramatically evolved long before any physical reactor was built. This effort offers a strong endorsement of such multidisciplinary, computationally based modeling teams in the design of new products in areas of emerging technologies where heretofore extensive and costly experimental design was the central paradigm.
