Title of article :
A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
Author/Authors :
Mascali، نويسنده , , Giovanni and Romano، نويسنده , , Vittorio، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
17
From page :
213
To page :
229
Abstract :
This paper can be considered as the natural prosecution of Mascali and Romano (2009) [5]. Here, we describe the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands. The model is still based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle. Comparisons are made with the results in [5], in the case of bulk silicon, in order to establish the importance of non-parabolicity.
Keywords :
Hydrodynamical models , Hole transport
Journal title :
Mathematical and Computer Modelling
Serial Year :
2011
Journal title :
Mathematical and Computer Modelling
Record number :
1597506
Link To Document :
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