Vacuum-UV influenced design of polymers and dissolution inhibitors for next generation photolithography

An overview of our 157 nm photoresist development activities is presented. Examination of the vacuum ultraviolet (VUV) absorbances of fluorinated monomers and polymers has provided knowledge that influenced copolymer design so that resist transparency in the vacuum-UV can be maximized. Partially fluorinated norbornenes and tricyclononenes (TCNs) have been incorporated into copolymers using metal-catalyzed addition and radical initiators. These materials have orders of magnitude higher transparency at 157 nm compared to their hydrocarbon analogues as measured by variable angle spectroscopic ellipsometry (VASE). We have also synthesized fluorinated dissolution inhibitors for use in a three-component resist system. The results of preliminary lithographic evaluations of resists formulated from these polymers are presented.