Fluorocarbon dielectrics via hot filament chemical vapor deposition

Fully dense fluorocarbon films can have dielectric constants (κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear –CF2– chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.