Title of article :
Enhancement of the ionic response of field effect transducers using porous silicon
Author/Authors :
Zairi، نويسنده , , S and Martelet، نويسنده , , C and Jaffrezic-Renault، نويسنده , , N and Vocanson، نويسنده , , F and Lamartine، نويسنده , , R and Mʹgha??eth، نويسنده , , R and Maaref، نويسنده , , Amor Gamoudi، نويسنده , , M، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2001
Pages :
8
From page :
951
To page :
958
Abstract :
Oxidised porous silicon samples prepared from highly and weakly doped p-type silicon substrates, have been functionalised with calix[4]arene (CA) molecules. They have been used for sodium detection as electrolyte/insulator/silicon (EIS) structures. An over Nernstian behaviour was observed and correlated with physical parameters of porous silicon samples (porosity, resistivity). A generalised Nernstian equation was proposed in order to describe this property. CA functionalised EIS structures based on porous silicon present higher lifetime compared to flat structures.
Keywords :
Porous silicon , Sensitivity , Over Nernstian , Sodium detection , Lifetime
Journal title :
Talanta
Serial Year :
2001
Journal title :
Talanta
Record number :
1641961
Link To Document :
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