Influence of hydrogen on electrical resistivity of Ti66Ni20Cu10Si4 amorphous alloy

Electrical resistivities of an as-quenched alloy as well as an alloy doped with 6% (atomic) of hydrogen were measured in the range 4.2–300 K and approximated by the model of electron–phonon scattering in amorphous solids. It was found that the radius of the Fermi sphere is smaller in the doped sample and therefore atoms of hydrogen are bonded with electrons of the alloy. Temperature dependence of an excess resistivity caused by hydrogen had the same main features as that for crystalline metals with any impurities.