Electrical and photovoltaic properties of Cr/Si Schottky diodes

The electrical properties of the Cr/p-Si(111) and Cr/n-Si(100) junctions were investigated through capacitance–voltage and current–voltage measurements, performed under dark and light conditions at room temperature. Diode parameters of Cr/Si Schottky diode like ideality factor and barrier height were obtained and variations of them were monitored as a function of temperatures. Also, an attempt to explore the governing current flow mechanism was tried. The reverse biased I–V measurement under illumination exhibited anomalous behavior as well as high photosensitivity. The former was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as 370 mV and Isc = 44.5 μA, respectively.