Title of article :
Epitaxial electrodeposition of lead telluride films on indium phosphide single crystals
Author/Authors :
Beaunier، نويسنده , , L and Cachet، نويسنده , , H and Cortes، نويسنده , , R and Froment، نويسنده , , M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
4
From page :
215
To page :
218
Abstract :
Epitaxial PbTe films were electrodeposited on (1 1 1) InP single crystals, from solutions containing Pb2+ and Cd2+ ions, the latter being largely in excess. High energy electron diffraction and X-ray diffraction reveal the formation of epitaxial films accompanied by the presence of polycrystalline PbTe. The poor epitaxy is related to a large lattice mismatch with the InP substrate. A low density of planar defects, compared with II–VI chalcogenides, is observed.
Keywords :
Lead telluride , Electrodeposition , Indium phosphide , epitaxial growth
Journal title :
Journal of Electroanalytical Chemistry
Serial Year :
2002
Journal title :
Journal of Electroanalytical Chemistry
Record number :
1666038
Link To Document :
بازگشت