Title of article
Photoelectrochemical properties of layered niobate (K4Nb6O17) films prepared by electrophoretic deposition
Author/Authors
Koinuma، نويسنده , , M and Seki، نويسنده , , H and Matsumoto، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
81
To page
85
Abstract
Layered niobate oxide (K4Nb6O17·3H2O) films with high orientation and strong adhesion were fabricated by electrophoretic deposition. The deposited films displayed the behavior of a typical n-type semiconductor in K2SO4 solution. When the films were irradiated with UV light, an anodic photocurrent due to the oxidative reaction of the water between the NbO6 layers could be observed. Consequently, the deposited film was converted by photoelectrochemical oxidation from a hydrated form (K4Nb6O17·3H2O) into an anhydrous form (K4Nb6O17).
Keywords
photoelectrochemistry , n-type semiconductor , Electrophoretic Deposition , niobate , Layered thin film
Journal title
Journal of Electroanalytical Chemistry
Serial Year
2002
Journal title
Journal of Electroanalytical Chemistry
Record number
1668346
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