Title of article
On a heterostructure field-effect transistor (HFET) based hydrogen sensing system
Author/Authors
Hsu، نويسنده , , Chi-Shiang and Lin، نويسنده , , Kun-Wei and Chen، نويسنده , , Huey-Ing and Chen، نويسنده , , Tai-You and Huang، نويسنده , , Chien-Cheng and Chou، نويسنده , , Po-Cheng and Liu، نويسنده , , Rong-Chau and Liu، نويسنده , , Wen-Chau، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
7
From page
15906
To page
15912
Abstract
An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.
Keywords
HFET , Hydrogen sensor , Sensing system
Journal title
International Journal of Hydrogen Energy
Serial Year
2011
Journal title
International Journal of Hydrogen Energy
Record number
1668724
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