Title of article :
Adsorption kinetics of d-ribose on the bismuth(0 0 1) plane
Author/Authors :
Jنnes، نويسنده , , A. and Lust، نويسنده , , K. and Lust، نويسنده , , E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
13
From page :
27
To page :
39
Abstract :
Cyclic voltammetry and impedance have been employed for the study of d-ribose adsorption kinetics at the Bi(0 0 1) single crystal plane ∣ 0.05 M Na2SO4+0.005 M NaH2PO4+0.005 M Na2HPO4 aqueous base electrolyte system (pH 6.7) interface. Systematic analysis of the Cole–Cole and other dependences for the Bi(0 0 1) ∣ 0.05 M Na2SO4+0.005 M NaH2PO4+0.005 M Na2HPO4+H2O (base electrolyte) interface shows that mainly the diffusion step limited adsorption of buffer solution components (NaH2PO4, Na2HPO4) in the region −1.3<E<−0.55 V (saturated calomel electrode, SCE) and the slow electroreduction (i.e. cathodic hydrogen evolution) at E≤−1.525 V is possible. Analysis of impedance data for the Bi(0 0 1) ∣ base electrolyte+d-ribose interface demonstrates that to a first approximation, the classical Frumkin–Melik-Gaikazyan equivalent circuit can be used for the fitting of the d-ribose adsorption data. Thus the rate of adsorption of d-ribose is limited mainly by the diffusion step at E≥−1.3 V (SCE) but, at E≤−1.525 V, there are small deviations from a purely diffusion limited step toward mixed kinetics (slow diffusion, heterogeneous adsorption and charge transfer steps) at high a.c. frequencies. At very low frequencies, the two-dimensional association of d-ribose molecules has been detected. More complicated equivalent circuits have been tested for the simulation of experimental impedance data at −1.7<E<−1.3 V (SCE), where the electroreduction of the base electrolyte components is possible in addition to d-ribose adsorption.
Keywords :
d-Ribose adsorption , Adsorption kinetics , Impedance , Bi single crystal
Journal title :
Journal of Electroanalytical Chemistry
Serial Year :
2003
Journal title :
Journal of Electroanalytical Chemistry
Record number :
1668949
Link To Document :
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