Title of article
Copper underpotential deposition at high index single crystal surfaces of Au
Author/Authors
Kuzume، نويسنده , , Akiyoshi and Herrero، نويسنده , , Enrique and Feliu، نويسنده , , Juan M and Nichols، نويسنده , , Richard J and Schiffrin، نويسنده , , David J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
157
To page
161
Abstract
Copper underpotential deposition (Cu upd) studies have been carried out on flat and stepped Au single crystal surfaces to demonstrate the influence of crystal orientation on Cu upd characteristics. Seven different Au single crystal surfaces were employed, Au(1 1 1), Au(1 1 0), Au(1 0 0), Au(5 5 4), Au(7 7 5), Au(3 3 2) and Au(7 5 5). Voltammetric contributions for Cu upd at both (1 1 0) and (1 0 0) oriented steps were similar to those on the extended (1 1 0) and (1 0 0) surfaces. In contrast, the formation of the (3×3) R30° structure on (1 1 1) terraces is strongly dependent on their width. An increase in step density and the corresponding reduction in (1 1 1) terrace width favour the (3×3) R30° → (1 × 1) phase transition. This could result from the influence of structural or electronic (Smoluchowski) effects on the energetics and/or kinetics of the phase transition.
Keywords
Underpotential deposition , Adsorption , single crystals , Physical electrochemistry
Journal title
Journal of Electroanalytical Chemistry
Serial Year
2004
Journal title
Journal of Electroanalytical Chemistry
Record number
1670649
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