Author/Authors :
Hung، نويسنده , , Shao-Tsu and Chang، نويسنده , , Chi-Jung and Hsu، نويسنده , , Chien-Hsing and Chu، نويسنده , , Byung Hwan and Lo، نويسنده , , Chien Fong and Hsu، نويسنده , , Chin-Ching and Pearton، نويسنده , , Stephen J. and Holzworth، نويسنده , , Monta Raymond and Whiting، نويسنده , , Patrick Guzek and Rudawski، نويسنده , , Nicholas Guy and Jones، نويسنده , , Kevin S. and Dabiran، نويسنده ,
Abstract :
In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of a HEMT device through a photolithography process. The high electron sheet carrier concentration of nitride HEMTs provides an increased sensitivity relative to simple Schottky diodes fabricated on GaN layers. The morphology and crystalline properties of the SnO2-gate, together with the texture of the multilayer films on the device were investigated by SEM, HRTEM, EDS and XRD. The effects of annealing treatment on the crystalline properties of the SnO2-gate, and gas sensing properties of SnO2-gated HEMT sensors were studied. The SnO2-gated HEMT sensor showed fast and reversible hydrogen gas sensing response at low temperature.
Keywords :
Hydrogen sensor , Tin oxide (SnO2) , Annealing , High electron mobility transistors (HEMT)
