Title of article :
Fabrication of nano N-doped In2Ga2ZnO7 for photocatalytic hydrogen production under visible light
Author/Authors :
Martha ، نويسنده , , Satyabadi and Parida، نويسنده , , K.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
11
From page :
17936
To page :
17946
Abstract :
N-doped In2Ga2ZnO7 photocatalysts were fabricated by solid state reaction route. All the prepared photocatalysts were successfully characterised by PXRD, optical absorption spectra, SEM, TEM, XPS, BET surface area and photoresponse studies. The formation of In2Ga2ZnO7 was confirmed by the PXRD pattern. Optical absorption spectra showed that the visible light absorption of all the photocatalysts were enhanced by nitrogen doping. Among all the prepared photocatalysts, 1 wt% Pt loaded N-GaInZn-500 showed enhanced photocatalytic activity towards hydrogen evolution under visible light irradiation in presence of 10 vol% methanol solution as sacrificial agent. The excellent photocatalytic activity of N-GaInZn-500 is in agreement with N-content, bandgap energy, PL intensity and Surface area.
Keywords :
Bandgap energy , N-doped In2Ga2ZnO7 , N-content , Photocatalytic hydrogen production
Journal title :
International Journal of Hydrogen Energy
Serial Year :
2012
Journal title :
International Journal of Hydrogen Energy
Record number :
1673980
Link To Document :
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