• Title of article

    Chemical interaction of NF3 with Si (Part II): Density functional calculation studies

  • Author/Authors

    Endou، نويسنده , , A. and Little، نويسنده , , T.W. and Yamada، نويسنده , , A. and Teraishi، نويسنده , , K. and Kubo، نويسنده , , M. and Ammal، نويسنده , , S.S.C. and Miyamoto، نويسنده , , A. and Kitajima، نويسنده , , M. and Ohuchi، نويسنده , , F.S.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    243
  • To page
    248
  • Abstract
    The interaction of NF3-generated ion beam and plasma with a Si surface as studied by X-ray photoelectron spectroscopy was reported in Part I. Interpretation and rationalization of the peak positions were made initially based on the expected charge on each atom based on Pauling electronegativity values. Quantum chemical calculations based on density functional theory (DFT) were performed to test the validity of the qualitative electronegativity approach. Using Si10H16 clusters as a model, adsorption of F atoms on HSi(111)-1×1 and HSi(100)-1×1 surfaces, the stability of F atoms at two kinds of interstitial sites and their atomic charges, was determined. Mulliken atomic charge analysis indicated that the adsorbed F atoms on Si surfaces as well as at the interstitial sites possess large negative charges by forming SiF bonds, whereas less negative charges were associated with F atoms bound to surface SiN species. The DFT calculations confirmed the expected changes in atomic charge and the direction of binding energy shift for FNSi moieties.
  • Keywords
    Nitrogen trifluoride and silicon , Density functional theory , Mulliken atomic charge , Cluster
  • Journal title
    Surface Science
  • Serial Year
    2000
  • Journal title
    Surface Science
  • Record number

    1677558