Surface reaction of triethylgallium and triethylantimony on GaSb(100)-(1×3)

The decomposition of triethylgallium (TEGa) and triethylantimony (TESb) on GaSb(100)-(1×3) was studied using temperature programmed desorption (TPD), static secondary ion mass spectroscopy, low energy electron diffraction and X-ray photoelectron spectroscopy. TEGa readily decomposes on the surface below 150 K, while TESb does not dissociatively adsorb below 320 K. The reactive sticking coefficient of TEGa is several orders of magnitude higher than that of TESb. The main decomposition products in TPD following dissociative adsorption were ethylene, hydrogen and a small amount of ethyl radical for both TEGa and TESb. Homolysis and β-hydride elimination are believed to be the desorption pathways for ethyl ligand removal from the surface following chemisorption of both precursors. Surface Ga atoms are proposed as reactive sites for ethyl reaction following the decomposition of TEGa and TESb on GaSb(100).